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IRS233(0,2)(D)(S&J)PbF
Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Fault Reporting
Over-Current Protection
Over-Temperature Shutdown Protection
Truth Table: Undervoltage lockout, ITRIP
Advanced Input Filter
Short-Pulse / Noise Rejection
Integrated Bootstrap Functionality
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Negative V S Transient SOA
DC- bus Current Sensing
PCB Layout Tips
Integrated Bootstrap FET limitation
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS233(2,0)(D) HVICs are designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate several
parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of
the power switch, is defined as I O . The voltage that drives the gate of the external power switch is defined as V HO for the high-
side power switch and V LO for the low-side power switch; this parameter is sometimes generically called V OUT and in this case
does not differentiate between the high-side or low-side output voltage.
V B
(or V CC )
HO
I O+
V B
(or V CC )
HO
(or LO)
V S
+
V HO (or V LO )
-
(or LO)
V S
I O-
(or COM)
Figure 1: HVIC sourcing current
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(or COM)
Figure 2: HVIC sinking current
9
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